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R6030KNX

R6030KNX
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Numero di parte
R6030KNX
categorie
MOSFET
RoHS
Scheda dati
Descrizione
MOSFET Nch 600V 30A Si MOSFET
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specificazioni

categorie
MOSFET
Channel Mode
Enhancement
Configuration
Single
Fall Time
50 ns
Forward Transconductance - Min
10 s
Id - Continuous Drain Current
30 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Bulk
Part # Aliases
Pd - Power Dissipation
86 W
Product Type
MOSFET
Qg - Gate Charge
56 nC
Rds On - Drain-Source Resistance
115 mOhms
Rise Time
65 ns
Technology
SI
Transistor Polarity
N-Channel
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
100 ns
Typical Turn-On Delay Time
35 ns
Unit Weight
Vds - Drain-Source Breakdown Voltage
600 V
Vgs - Gate-Source Voltage
20 V
Vgs th - Gate-Source Threshold Voltage
3 V

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Thanks for your feedback!
My package arrived wet, not know where occurs this fact, but working all right
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
packed pretty good, all is ok,-seller.
Works. Find the price of this product is very good
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R6030KNX Notizie

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